2018-01
2018-01Edit

Sommaire

1. CALPEK5c_HS1801a, 17/01/2018
2. CALPEK5c_HS1801b, 18/01/2018

CALPEK5c_HS1801a, 17/01/2018

Wafer batch from sapienza (380µm, intrinsic, 10 kOhm.cm, DSP, <100>)

Désoxydation wafer (Hélène, SPEC)

preparation used 6 times
HF:ODI 1:20, 1'30
rinçage ODI 1'

evap nouveau canon SPEC

Al 14 / Ti 33 / Al 30 -> obtained Tc=mK

Pumped 5h with valve open + N2 trap filled
-> e-8mb / e-7 (sas) 
NO ETCH

DEGAS sources
- Al 2nm/s
        goes up to 1e-6 @ Imax
        down to 8e-8 (off)
- Ti 0.5nm/s 
        up then down 2.8e-8 / 4.5e-7 
        down to 2.1 / 3.6e-8 (off)           
EVAPORATION
- Al 14nm @ 0.5nm/s, 0°, spin 16°/s. P_evap = 1.2 / 1.7e-7  ->  5.5/ 6.4e-8 (gun off)
dt = 2'30  
- Ti 33nm @ 0.5nm/s, 0°, spin 16°/s. P_evap  = 2.6 / 4e-8 ->  2.0/ 3.0e-8 (gun off)
dt = 3' 
- Al 29nm @ 0.5nm/s, 0°, spin 16°/s. P_evap = 5.7 / 6.2e-8 (begin) 
                                              7.7 / 7.9e-8 (end)
VENT WITH O2 up to 400mb

CALPEK5c_HS1801b, 18/01/2018

Wafer batch from sapienza (380µm, intrinsic, 10 kOhm.cm, DSP, <100>)

Désoxydation wafer (Hélène, SPEC)

preparation used 6 times
HF:ODI 1:20, 1'30
rinçage ODI 1'

evap nouveau canon SPEC

Al 14 / Ti 33 / Al 30 -> obtained Tc=mK

Pumped overnight with valve open + N2 trap filled
-> 6.4e-8mb / 6.7e-8 (sas) 
NO ETCH

DEGAS sources
- Al 2nm/s
        goes up to 1.4e-6 @ 160mA
        down to 9e-8 (off)
- Ti 0.5nm/s 
        up then down 2.8e-8 / 3.5e-7 
        down to 2.3 / 2.9e-8 (off)           
EVAPORATION
- Al 14nm @ 0.5nm/s, 0°, spin 16°/s. P_evap = 9 / 9e-8  ->  5.0/ 5.0e-8 (gun off)
dt = 2'30  
- Ti 33nm @ 0.5nm/s, 0°, spin 16°/s. P_evap  = 2.6 / 3e-8 ->  2.2/ 2.4e-8 (gun off)
dt = 3' 
- Al 29nm @ 0.5nm/s, 0°, spin 16°/s. P_evap = 7 e-8 (begin) 
                                              8e-8 (end)
VENT WITH O2 up to 490mb