2015-11
2015-11Edit

Sommaire

1. CALPEK1, 12/11/2015
2. CALPEK2, 16/11/2015

CALPEK1, 12/11/2015

Wafer batch ? from ? (355-405µm, N doped -P-, 40 Ohm.cm, SSP, <111>)

Désoxydation wafer (Hélène, SPEC)

HF:ODI 1:20, 1'
rinçage ODI 1'

evap nouveau canon SPEC

Ti 10 / Al 25 (target Tc = 920 mK)

Pumped 2h
DEGAS sources
- Ti 0.5nm/s 
P raises > 2e-7 
- Al 2nm/s
    3.5e-7 
EVAPORATION
- Ti pump m @ 0.2nm/s 
    -> P_ch = 3.8e-8 / P_sas = 5.4e-8mb
    -> P_ch = 3.4e-8 / P_sas = 5.1e-8mb gun off
- Ti 10.8nm @ 0.5nm/s, 0°, spin 16°/s. 
    P_evap  = 4.0 / 5.8e-8 ->  3.4/ 4.4e-8 (gun off)
- Al 25.6nm @ 1nm/s, 0°, spin 16°/s. 
    P_evap  = 1.2 / 1.4e-7
5'30 between end of Ti (shutter close) and beginning of Al (shutter open) 
(skept wait time after Ti ramp down)

CALPEK2, 16/11/2015

Wafer batch G214 from ? (350µm, intrinsic, 17.5-20 kOhm.cm, DSP, <111>)

Désoxydation wafer (Hélène, SPEC)

HF:ODI 1:20, 1'
rinçage ODI 1'

evap nouveau canon SPEC

Ti 33 / Al 25 (target Tc = 600 mK)

Pumped over night with valve open 
-> 7.7e-8mb (sas: 9.0e-8) 
-> 6.0e-8mb (sas: 8.0e-8) after filling N2 trap
DEGAS sources
- Al 2nm/s
    7e-7 @ 350mA (1.9)
        -> 1.5e-7 gun off
- Ti 0.5nm/s 
P decreases to 4e-8 on both ch and sas at beginning of crucible heat (@38mA, no rate) 
        -> 3.1e-8 (4e-8) gun off
EVAPORATION
- Ti pump m @ 0.2nm/s -> P_sas = 3.1e-8 / P_ch = 3.2e-8mb gun off
- Ti 33.7nm @ 0.5nm/s, 0°, spin 16°/s. P_evap  = 3.7 / 4.2e-8 ->  3.0/ 2.8e-8 (gun off)
- Al 25.4nm @ 1nm/s, 0°, spin 16°/s. 
P_evap  = 1.1 / 1.1e-7 ->  5e-8/ 9e-8 (gun off)
5'50 between end of Ti (shutter close) and beginning of Al (shutter open) 
(skept wait time after Ti ramp down)

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