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2016-10
2016-10Edit

    CALPEK4, 14/10/2016Modifier la section

    Wafer batch  from sapienza (380µm, intrinsic, 10 kOhm.cm, DSP, <100>)

    • Désoxydation wafer (Hélène, SPEC, 23/05) 

    Fresh preparation
    HF:ODI 1:20, 1'
    rinçage ODI 1'

    • evap nouveau canon SPEC

    Ti 33 / Al 25

    Pumped 4h30 with valve open 
    -> 5.4e-8mb (sas: 9e-8) 
    ETCH
    to remove water from surface
    500V, 65mA, 5"
    DEGAS sources
    - Ti 0.5nm/s 
            goes up to 2e-6mb @ 37mA
            -> 2.8e-8 (9.0e-8) gun off
    - Al 2nm/s
            goes up to 4e-7 @ Imax
            -> 7.8e-8 (1.1e-7) gun off
    EVAPORATION
    - Ti pump m @ 0.2nm/s -> P_sas = 2.8e-8 / P_ch = 5.3e-8mb -> 2.5/4.9e-8 gun off
    - Ti 33.1nm @ 0.5nm/s, 0°, spin 16°/s. P_evap  = 3.0 / 6.0e-8 ->  2.6/ 4.4e-8 (gun off)
    - Al 26.4nm @ 1nm/s, 0°, spin 16°/s. P_evap = 1.4 / 1.7e-7 
    
    4'30 between end of Ti (shutter close) and beginning of Al (shutter open) 
    (skept all possible wait steps)
    
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