Wafer batch from sapienza (380µm, intrinsic, 10 kOhm.cm, DSP, <100>)
Fresh preparation
HF:ODI 1:20, 1'
rinçage ODI 1'
Ti 33 / Al 25
Pumped 4h30 with valve open -> 5.4e-8mb (sas: 9e-8) ETCH to remove water from surface 500V, 65mA, 5" DEGAS sources - Ti 0.5nm/s goes up to 2e-6mb @ 37mA -> 2.8e-8 (9.0e-8) gun off - Al 2nm/s goes up to 4e-7 @ Imax -> 7.8e-8 (1.1e-7) gun off EVAPORATION - Ti pump m @ 0.2nm/s -> P_sas = 2.8e-8 / P_ch = 5.3e-8mb -> 2.5/4.9e-8 gun off - Ti 33.1nm @ 0.5nm/s, 0°, spin 16°/s. P_evap = 3.0 / 6.0e-8 -> 2.6/ 4.4e-8 (gun off) - Al 26.4nm @ 1nm/s, 0°, spin 16°/s. P_evap = 1.4 / 1.7e-7 4'30 between end of Ti (shutter close) and beginning of Al (shutter open) (skept all possible wait steps)
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