2016-05

2016-05Edit

CALPEK3, 23-25/05/2015

Wafer batch  from sapienza (380µm, intrinsic, 10 kOhm.cm, DSP, <100>)

• Désoxydation wafer (Hélène, SPEC, 23/05) 

HF:ODI 1:20, 1'
rinçage ODI 1'

• evap nouveau canon SPEC

Al 10 / Ti 20 / Al 25 (target Tc = 920 mK)

Pumped over night + day + night with valve open 
-> 6.0e-8mb (sas: 6.5e-8) 
DEGAS sources
- Ti 0.5nm/s 
        -> 2.3e-8 (2.9e-8) gun off
- Al 2nm/s
        -> 5.4e-8 (5.6e-8) gun off
EVAPORATION
- Ti pump m @ 0.2nm/s -> P_sas = 3.1e-8 / P_ch = 3.2e-8mb gun off
- Al 10.3nm @ 1nm/s, 0°, spin 16°/s. P_evap  = 2.2 / 2.6e-7 ->  5.6/ 5.4e-8 (gun off)
- Ti 20.4nm @ 0.5nm/s, 0°, spin 16°/s. P_evap  = 2.8 / 3e-8 ->  2.5/ 2.0e-8 (gun off)
- Al 25.7nm @ 1nm/s, 0°, spin 16°/s. P_evap = 7 / 8e-8 (increasing) -> 5.5/ 4.8e-8 (gun off)

3' between end of Al1 and begin of Ti
4' between end of Ti (shutter close) and beginning of Al (shutter open) 
(skept all possible wait steps)