2015-05

2015-05Edit

NIPEK8, 19/05/2015

Wafer batch 0806RR from FZ wafers (525µm +/-25 thick)

- Désoxydation wafer (Hélène, SPEC) 
HF:ODI 1:20, 1'
rinçage ODI 1'

- evap nouveau canon SPEC (09/03)
Ti 10 / Al 25 (target Tc = mK)

Pumped over night with valve open -> 7.0e-8mb (ch: 5.0e-8) after filling N2 trap
DEGAS sources
- Ti 0.5nm/s 
P raises > ? on both ch and sas at beginning of crucible heat (@39mA) 
        -> 3.2e-8 (2.8e-8) gun off
- Al 2nm/s
    2.7e-7 @ 420mA (1.9)
        -> 6.0e-8 / 5.7e-8 gun off
EVAPORATION
- Ti pump m @ 0.2nm/s -> P_sas = 2.4e-8 / P_ch = 2.6e-8mb gun off
- Ti 10.4nm @ 0.5nm/s, 0°, spin 16°/s. P_evap  = 3.2 / 3.2e-8 ->  2.2/ 2.4e-8 (gun off)
- Al 25.47nm (max 35nm on quartz after cool down of source) @ 1nm/s, 0°, spin 16°/s. 
P_evap  = 1.5 / 1.7e-7 ->  6e-8/ 6e-8 (gun off)
5'50 between end of Ti (shutter close) and beginning of Al (shutter open) 
(skept wait time after Ti ramp down)
NB:during Al evap
    P_sas = 3.1e-8mb @ 235mA
          = 5.3e-8mb @ 285mA
          = 7.1e-8mb @ 300mA (~0.8nm/s)
          = 1.5e-7mb @ 350mA (0.9-1nm/s)