2014-11

2014-11Edit

mercredi 19/11

Process 1 wafer (NIPEK1) to send to grenoble for proximity effect aluminum kids
Wafer batch TO COMPLETE (500µm thick)

- Désoxydation wafer (Hélène, SPEC) 
HF:ODI 1:20, 1'
rinçage ODI 1'

- evap nouveau canon SPEC
Add witness chip in the evap PEK1cd_3
Al 50 / Ti 10 / Au 1 (target Tc < 950mK)

Pumped 4h, open valve -> 2.5e-7mb 
- Ti pump 75nm @ 0.2nm/s -> P_sas = 7.7e-8 / P_ch = 3.7e-8mb (7.0 / 3.0e-8 gun off)
- Al 51nm @ 1nm/s, 0°, spin 16°/s. P_evap  = 2.3e-7 -> 1.1e-7 (gun off)
- Ti 10.4nm @ 0.5nm/s, 0°, spin 16°/s. P_evap  = 6.6e-8 -> 5.5e-8 (gun off)
- Au 1.14nm @ 0.1nm/s, 0°, spin 16°/s. P_evap = 1.5e-7

mesures Néel ~ 650mK, Q_res ~ 12k, noise 20HZ/sqrt(Hz), no steep cutoff

lundi 24/11

Après tentative ratée la semaine d'avant (cause Laurent pas mis sous vide)

Process 1 wafer (KID_UCSB_NbSi_1) to send to Ben Mazin UCSB
Wafer batch G214 (3", DSP, 17.5-20kohm.cm)

- Désoxydation wafer (Hélène, SPEC) 
HF:ODI 1:20, 1'
rinçage ODI 1'

- evap nouveau canon CSNSM. Mise sous vide dans la 1/2h qui suit.
NbSi 17.5%, 125nm