2016-11

2016-11Edit

CALPEK5, 15/11/2016

Wafer batch  from sapienza (380µm, intrinsic, 10 kOhm.cm, DSP, <100>)

• Désoxydation wafer (Hélène, SPEC) 

preparation used 2 times
HF:ODI 1:20, 1'
rinçage ODI 1'

• evap nouveau canon SPEC

Ti 10 / Al 25

Pumped over night with valve open 
-> 6e-8mb
ETCH
to remove water from surface
500V, 65mA, 2", spin 16°/s 
DEGAS sources
- Al 2nm/s
        goes up to 2e-6 @ 150mA
        -> 2.3e-7 ch (1.3e-7 sas) gun off
- Ti 0.5nm/s 
        does no go much up to 2e-6mb @ 37mA
        -> 3e-8 (3.8e-8) @ 0.1nm/s
EVAPORATION
no stop between degas and evap just decrease rate
- Ti 10.2nm @ 0.2nm/s, 0°, spin 16°/s. P_evap  = 2.5 / 3.3e-8 ->  2.63/ 2.7e-8 (gun off)
- Al 25.5nm @ 1nm/s, 0°, spin 16°/s. P_evap = 2 / 2e-7 

4'10 between end of Ti (shutter close) and beginning of Al (shutter open) 
(skept all possible wait steps)