2015-01

2015-01Edit

NIPEK4, 08/01/2015

Process 1 wafer to send to grenoble for proximity effect aluminum kids
Wafer batch 0806RR from FZ wafers (525µm +/-25 thick)

- Désoxydation wafer (Hélène, SPEC) 
HF:ODI 1:20, 1'
rinçage ODI 1'

- evap nouveau canon SPEC
Ti 10 / Al 25 (target Tc = mK)
The evaporator was just restarted after holiday break... was kept under vacuum but pump off, so vacuum was bad.

Pumped overnight with valve open -> 8.5e-8mb (ch: )
DEGAS sources
- Ti 0.2nm/s 
P raises > 1.7e-6 on both ch and sas at beginning of crucible heat (@39mA) -> 5e-8 gun off
- Al 2nm/s
    1.3e-7 @75mA
    5e-7 @ 300mA
    7e-7 @ 380mA
    7.2e-7 @ 430mA
- Ti 0.5nm/s
    P_sas=5e-8 / P_ch = 8e-8 (unusual that P_ch > P_sas)
-> 3e-8 / 6e-8 gun off
EVAPORATION
- Ti pump m @ 0.2nm/s -> P_sas = 4e-8 / P_ch = 7.2e-8mb (3.1 / 6.4e-8 gun off)
- Ti 10.2nm @ 0.5nm/s, 0°, spin 16°/s. P_evap  = 3.8 / 6.9e-8 ->  3.2/ 6.7e-8 (gun off)
- Al 25.7nm @ 2nm/s, 0°, spin 16°/s. P_evap  = 1.7 / e-7 ->  8e-8/ 1.2e-7 (gun off)
4'10 between end of Ti (shutter close) and beginning of Al (shutter open)

Tested at CSNSM, could not see any resonance, and Tc was about 950mK in RF (at initial cooldown->bad measure)
The wafer was badly processed at Neel and all meanders went away in HF (resist adhesion probably).

NIPEK5, 15/01/2015

Process 1 wafer to send to grenoble for proximity effect aluminum kids
Wafer batch 0806RR from FZ wafers (525µm +/-25 thick)

- Désoxydation wafer (Hélène, SPEC) 
HF:ODI 1:20, 1'
rinçage ODI 1'

- evap nouveau canon SPEC
Ag 4 / Al 26 (target Tc = 850 mK)

Pumped overnight with valve open -> 5.7e-8mb (ch: 5e-8)
- Ti pump 20nm @ 0.2nm/s -> P_sas = 3.6e-8 / P_ch = 3.6e-8mb (2.9 / 3.2e-8 gun off)
- Ag 4.07nm @ 0.2nm/s, 0°, spin 16°/s. P_evap  = 4.8 / 5e-8 ->  4.0/ 4.2e-8 (gun off)
- Al 26.26nm @ 1nm/s, 1°, spin 16°/s. P_evap  = 2.3 / 2.4e-7

Note the 1° angle is supposed to displace the edge of Al by 25nm from the edge of Ag

/!\ Note that on the 19/01, Pief found out that the Al source was polluted with an inclusion (non fusible)
Will be analyzed.

KID_UCSB_NbSi_2

- Désoxydation wafer (Hélène, SPEC) 
HF:ODI 1:20, 1'
rinçage ODI 1'

- evap Laurent CSNSM
NbSi 17.5%, 125nm

NIPEK6, 20/01/2015

/!\ Note Al source was just replaced the morning of 19/01, and evap was pumped during night 19->20 for this layer

Process 1 wafer to send to grenoble for proximity effect aluminum kids
Wafer batch 0806RR from FZ wafers (525µm +/-25 thick)

- Désoxydation wafer (Hélène, SPEC) 
HF:ODI 1:20, 1'
rinçage ODI 1'

- evap nouveau canon SPEC
Ti 10 / Al 25 (target Tc = mK)

Pumped overnight with valve open -> 8.5e-8mb (ch: )
DEGAS sources
- Ti P raises > 1e-6 on both ch and sas at beginning of crucible heat
- Al
- Ti

EVAPORATION
- Ti pump m @ 0.2nm/s -> P_sas = e-8 / P_ch = e-8mb (6.7 / 3.0e-8 gun off)
- Ti 10.2nm @ 0.5nm/s, 0°, spin 16°/s. P_evap  = 5.0 / e-8 ->  / e-8 (gun off)
- Al 25.7nm @ 2nm/s, 0°, spin 16°/s. P_evap  = 1.2 / e-7 ->  / e-8 (gun off)
4'10 between end of Ti (shutter close) and beginning of Al (shutter open)

Measurements at CSNSM on test sample gave a very bad transition, and no resonance could be found.