2014-12

2014-12Edit

mercredi 03/12

Process 1 wafer (NIPEK2) to send to grenoble for proximity effect aluminum kids
Wafer batch 0806RR from FZ wafers (525µm +/-25 thick)

- Désoxydation wafer (Hélène, SPEC) 
HF:ODI 1:20, 1'
rinçage ODI 1'

- evap nouveau canon SPEC
Ti 10 / Al 35 (target Tc = 850mK)

Pumped 4h with valve open -> 1.5e-7mb (ch: 6e-8)
- Ti pump m @ 0.2nm/s -> P raises > 1e-6 on both ch and sas at beginning of crucible heat
 P_sas = 7.6e-8 / P_ch = 3.9e-8mb (6.7 / 3.0e-8 gun off)
- Ti 10.5nm @ 0.5nm/s, 0°, spin 16°/s. P_evap  = 8.0 / 4.5e-8 -> 6.0 / 3.0e-8 (gun off)
- Al 35.7nm @ 2nm/s, 0°, spin 16°/s. P_evap  = 1.5 /1.2e-7 -> 8.5 / 5e-8 (gun off)

mesures Neel 17/12 (@1GHz): 930+/-30mK, bruit entre 2 et 10Hz/sqrt(Hz), Qint ~10000 - 20000
NB: après calcul, responsivity = 80kHz/pW (il faut intégrer la puissance de corps noir reçue dans la bande considérée - simulation de l'optique) => NEP = 2,5 - 12,5 .10^-17 W/sqrt(Hz)

vendredi 05/12

Process 1 wafer (NIPEK3) to send to grenoble for proximity effect aluminum kids
Wafer batch 0806RR from FZ wafers (525µm +/-25 thick)

- Désoxydation wafer (Hélène, SPEC) 
HF:ODI 1:20, 1'
rinçage ODI 1'

- evap nouveau canon SPEC
Al 45 / Ti 15 / Au 1 (target Tc = 800mK)

Pumped overnight with valve open -> 7.5e-8mb / 4.8e-8 (chamber)
- Ti pump 45nm @ 0.2nm/s -> P raises > 1e-6 on both ch and sas at beginning of crucible heat
 P_sas = 4.3e-8 / P_ch = 3.2e-8mb ( 3.6 / 2.5e-8 gun off)
- Al 45.7nm @ 1 nm/s, 0°, spin 16°/s. P_evap  = 1.8 / 1.7e-7 -> 6.5 / 5.4e-8 (gun off)
- Ti 15.6nm @ 0.5nm/s, 0°, spin 16°/s. P_evap  = 3.8 / 3.5e-8 ->  2.9/ 2.5e-8 (gun off)
- Au 1.05nm @ 0.09nm/s, 0°, spin 16°/s. P_evap  = 9e-8 / 1e-7 ->  4.8/ 4.7e-8 (gun off)