2017-10

2017-10Edit

CALKAL1, 03/10/2017

Wafer batch  from sapienza (380µm, intrinsic, 10 kOhm.cm, DSP, <100>)

• Désoxydation wafer (Hélène, SPEC) 

preparation used 4 times and old. Have to prepare 200mL more because someone took from the bottle
HF:ODI 1:20, 1'30
rinçage ODI 1'

• evap nouveau canon SPEC

Al 60+

Pumped 3h with valve open + N2 trap filled
-> 6.2e-8mb / 1.2e-7 (sas) 
NO ETCH

Ti Pump
- Ti 0.2nm/s 
        -> Pch = 3.1e-8 / sas = 7.9e-8 gun off
EVAPORATION
- Al 60nm @ 1nm/s, 0°, no spin. P_evap = 4 / 4e-7  ->  1.3/ 1.3e-7 (gun off)

CALPEK7, 4/10/2017

Wafer batch  from sapienza (380µm, intrinsic, 10 kOhm.cm, DSP, <100>)

• Désoxydation wafer (Hélène, SPEC) 

preparation used 5 times
HF:ODI 1:20, 1'30
rinçage ODI 1'

• evap nouveau canon SPEC

Al 15 / Ti 50 / Al 25 -> obtained Tc=mK

Pumped 3h with valve open + N2 trap filled
-> 7.0e-8mb / 2.7e-7 (sas) 
NO ETCH

DEGAS sources
- Al 2nm/s
        goes up to 1e-6 @ Imax
Ti PUMP      
- Ti 0.2nm/s 
        -> Pch = 3.0e-8 / sas = 1.1e-7 gun off
EVAPORATION
- Al 15nm @ 0.5nm/s, 0°, spin 16°/s. P_evap = 2.5 / 3.0e-7  ->  1.2/ 1.7e-7 (gun off)
dt = 2'30  
- Ti 50.3nm @ 0.5nm/s, 0°, spin 16°/s. P_evap  = 3.2 / 9.8e-8 ->  2.9/ 9e-8 (gun off)
dt = 3'15 
- Al 25nm @ 0.5nm/s, 0°, spin 16°/s. P_evap = 1.1 / 1.5e-7 

VENT WITH O2 up to 100mb

CALSAFPEK1, 03-05/10/2017

Wafer sapphire from cristek (Quantro), DSP
S6225, 330µm, C-plane

• evap Ge nouveau canon SPEC (03/10)

on the backside, evap 200nm Ge @ 0.5nm/s, relatively good vacuum (~1.5e-7)

• Spin PMMA on Ge layer

A3 @ 6krpm, bake 180°C 5' (~150nm)

• evap trilayer nouveau canon SPEC

Al 14 / Ti 33 / Al 30 -> obtained Tc=810mK

Pumped overnight with valve open + N2 trap filled
-> 4.4e-8mb / 5.4e-8 (sas) 
DEGAS sources
- Al 2nm/s
        goes up to 1e-6 @ Imax
        -> Pch = 8e-8 / sas = 8e-8 gun off  
- Ti 0.5nm/s 
        -> Pch = 2.7e-8 / sas = 3.0e-8 gun off   
ETCH
    10" @ 500V, 65mA, 0°
Ti PUMP
- Ti 0.2nm/s 
        -> Pch = 2.7e-8 / sas = 5.1e-8 gun off   
EVAPORATION
- Al 14.3nm @ 0.5nm/s, 0°, no spin. P_evap = 1.4 / 1.2e-7  ->  6.5/ 6.8e-8 (gun off)
dt = 2'20  
- Ti 33.05nm @ 0.5nm/s, 0°, no spin. P_evap  = 3.0 / 4.0e-8 ->  2.8/ 3.2e-8 (gun off)
dt = 2'50 
- Al 30.5nm @ 0.5nm/s, 0°, no spin. P_evap = 8.8 / 8.6e-8  ->  6.8/ 6.8e-8 (gun off)

VENT with O2

CALSAFPEK2, 23-24/10/2017

Wafer sapphire from cristek (Quantro), DSP
S6225, 330µm, C-plane

• evap Ge nouveau canon SPEC (03/10)

on the backside, evap 200nm Ge @ 0.5nm/s, relatively good vacuum (~1.5e-7)

• Spin PMMA on Ge layer

A6 @ 4krpm, bake 180°C 5' (~500nm)

• Clean ozone plasma

5' @ 100W, 200µb O2
Wafer not so clean in the end :-(

• evap trilayer nouveau canon SPEC

Al 14 / Ti 33 / Al 30 -> obtained Tc=810mK

Pumped 5h with valve open + N2 trap filled
-> 5.6e-8mb / 9.4e-8 (sas) 
ETCH
    10" @ 500V, 65mA, 0°
DEGAS sources
- Ti 0.5nm/s 
        -> raise P 1.8e-6 @ 38mA  
        -> Pch = 3.4e-8 / sas = 8.2e-8 gun off   
- Al 2nm/s
        goes up to 1.3e-7 @ Imax
        -> Pch = 6.8e-8 / sas = 9.4e-8 gun off  
Ti PUMP
- Ti 0.2nm/s 
        -> Pch = 2.8e-8 / sas = 6.2e-8 gun off   
EVAPORATION
- Al 14.1nm @ 0.5nm/s, 0°, 16°/s. P_evap = 1.8 / 1.8e-7  ->  7.0/ 9.0e-8 (gun off)
dt = 2'20  
- Ti 33.7nm @ 0.5nm/s, 0°, 16°/s. P_evap  = 3.3 / 6.0e-8 ->  3.0/ 5.4e-8 (gun off)
dt = 2'50 
- Al 30.6nm @ 0.5nm/s, 0°, 16°/s. P_evap = 1.0 / 1.0e-7  

VENT with O2