2015-03

2015-03Edit

NIPEK7, 06/03/2015

Process 1 wafer to send to grenoble for proximity effect aluminum kids
Wafer batch 0806RR from FZ wafers (525µm +/-25 thick)

- Désoxydation wafer (Hélène, SPEC) 
HF:ODI 1:20, 1'
rinçage ODI 1'

- evap nouveau canon SPEC (09/03)
Ti 10 / Al 25 (target Tc = mK)

Pumped over week-end with valve open -> 5.4e-8mb (ch: 5.2e-8) before filling N2 trap
DEGAS sources
- Ti 0.5nm/s 
P raises > 1.9e-6 on both ch and sas at beginning of crucible heat (@39mA) 
        -> 2.7e-8 (2.3e-8) gun off
- Al 2nm/s
    3.3e-8 @ 150mA (0.02nm/s)
    5e-8   @ 200mA (0.13)
    1.1e-7 @ 250mA (0.3)
    2.4e-7 @ 300mA (1.1)
    2.5e-7 @ 350mA (1.6)
    3e-7   @ 400mA (1.6)
    3.6e-7 @ 420mA (1.9)
        -> 5.3e-8 / 4.9e-8 gun off
EVAPORATION
- Ti pump m @ 0.2nm/s -> P_sas = 2.3e-8 / P_ch = 2.8e-8mb (1.7 / 2e-8 gun off)
- Ti 10.25nm @ 0.5nm/s, 0°, spin 16°/s. P_evap  = 2.5 / 2.8e-8 ->  1.6/ 1.9e-8 (gun off)
- Al 25.23nm (max 28nm on quartz after cool down of source) @ 2nm/s, 0°, spin 16°/s. 
P_evap  = 1.7 / 1.8e-7 ->  8e-8/ 1.2e-7 (gun off)
4'10 between end of Ti (shutter close) and beginning of Al (shutter open) 
(skept wait time after Ti ramp down)

The wafer was badly processed at NEEL, could not measure it properly!