2014-09

2014-09Edit

mardi 16/09

Process 2 wafers pour tests multilayers en proximité
Wafers batch 2451

PEKID1

Step 1 : inverted resist spin, exposure, develop, clean

bake wafer 1' @ 110°C (solvent evaporation)
spin AZ5214E (batch x from IEF, per 20/01/2014) 60" @ 4krpm
bake 1' @ 110°C
Expo 25mJ/cm2 @ 365nm, Vac contact
bake 2' @ 125°C (=setpoint)
Flood expo 300mJ/cm2 @ 365nm
Dev MIF726 45" @ 19.0°C, rinse ODI 60" beaker + 30" water tap
Clean O2 plasma, 30", 100W, 200µb

Dice in scriber, pieces of 19.9x29.9mm

Step 2 : evap
evap Louis, evaporateur bolo
2 plaquettes (les 2 autres ont été cassées) avec 4 compositions différentes:

- Ir : 1.5 - 2.5 - 4 - 7 nm / Al 28.5 - 27.5 - 26- 23 nm

- Ti : 3 - 5 - 8 - 14 nm / Al 27 - 25 - 22 - 16 nm