2014-12

2014-12Edit

JJoxv5_10

Increased undercut boxes, (both to top and to left).

exp: 30keV (01/12/2014)
dev: 1', eth:IPA=1:1 for 1', IPA 1'. Looks fine under optical microscope.
no Ashing
evap: ion milling 2x10" 3mA 500V, Al 30nm 0° 1 nm/s, dynamic oxydation 75mb 5 min, Al 0.6 nm 0° 0.1 nm/s (0.74nm at shutter close), dynamic oxydation 75mb  5 min, Al 60 nm +35°.
Lift-off: PG remover at 70°C for xx hour. No US.
Probe station:

Rserie ~1.0045 MΩ, Rtot ~5.217MΩ
SEM: JJOX5_10.zip versus JJoxv5_10-designs.zip
Overlap areas for A=1060 x 310 nm2, B=830 x 260 nm2, C=645 x 250 nm2, C=485x 310 nm2.
Ashing 3' @ 100W:

Shunt junction D on purpose by switching light on after measuring (with potar on "shunt" position, and probes layed down on junction D). This does not affect other junctions.
Aging (or another ashing???? -> Simon: No ashing)

Test wafer (03/12/2014)

Wafer: 1-10 Ω*cm, 100 nm thermal Ox, thickness=(270+/-25) um, Lot N°=11/1023.

Wafer preparation: clean in Acetone, then IPA, Hotplate for 3min at 120°C, Oxygen ashing at 100 W (0.2 mbar) for 3 min.

- spin MAA8.5 EL10 (batch 14020103, exp. 3/1/2015) @ 2000rpm for 50"
5" 500rpm 200rpm/s + 50" 2000rpm 1000rpm/s + 5" 6000rpm 4000rpm/s (edge removal)
- bake hot plate setpoint 180°C, 5'
- spin PMMA A6 (batch 14020103, exp. 3/1/2015) @ 6000rpm for 50" (same trick)
- bake hot plate setpoint 180°C, 15'
- UV III, (Quantronics batch, filled on the 02/2014 but expired on the 03/2005) @ 4000 rpm for
 50" 
(same trick)
- bake hot plate setpoint 140°C, 90 sec.

Cutting into 5 x 5 mm2. Remove any dust by blowing N2. Samples are ordered in the sample-box as given by their location on the wafer.

JJoxv5_11

slightly modify design according to observations on _10

exp: 30keV (03/12/2014)
Note there is a big issue with XL30, the fast blanker seems polluted or misaligned. When one passes to current spot 7, the focus and stigma on spot 1 are completely out of range, and become impossible to get back properly. The only way to recover a working column is to vent. Trentin suspects a polluted blanker. 
dev: 1', eth:IPA=1:1 for 1', IPA 1'. Looks fine under optical microscope.
no Ashing
evap: ion milling 2x10" 3mA 500V, Al 30nm 0° 1 nm/s, static oxydation 75mb 5 min, Al 0.6 nm 0° 0.1 nm/s (0.64nm at shutter close), static oxydation 75mb  5 min, Al 60 nm +35°.
Lift-off: PG remover at 70°C for 1 hour. No US.
Probe station (04/12/2014):

Rserie ~1.0042 MΩ, Rtot ~5.212MΩ
A: 1010x230nm², B: 780x195nm², C: 620x195nm², D: 465x245nm² (D is clearly shunted)
SEM: JJOX5_11.zip
Ashing 3' @ 100W, 0.2 mbar O2.
Probe station** (08/12/2014):

Rserie ~1.0048 MΩ, Rtot ~5.218MΩ

JJoxv5_12

After cleaning the XL30 fast blanker 45 minutes in the asher 200W, 200µb, mounting it back properly, I test that there is no more charging problem. But now we have to test that the litho is still working (is the blanker working?)

Maybe the openings of the mask between the boxes on _8µ and _9 came from that blanker charging issue...

exp: 30keV (04/12/2014)
dev: 1', eth:IPA=1:1 for 1', IPA 1'. Looks fine under optical microscope.
no Ashing
evap: ion milling 2x10" 3mA 500V, Al 30nm 0° 1 nm/s, static oxydation 5mb 5 min, Al 0.6 nm 0° 0.1 nm/s (0.64nm at shutter close), static oxydation 5mb  5 min, Al 60 nm +35°.
Lift-off: PG remover at 70°C for 1 hour. No US.
Probe station (05/12/2014):

- spin MAA8.5 EL10 (batch 14020103, exp. 3/1/2015) @ 2000rpm for 50"
5" 500rpm 200rpm/s + 50" 2000rpm 1000rpm/s + 5" 6000rpm 4000rpm/s (edge removal)
- bake hot plate setpoint 180°C, 15'
- evaporate Germanium at 0°, 50 nm, 0.2nm/s, p=5x10-7 mbar.
- spin PMMA A6 (batch 14020103, exp. 3/1/2015) @ 6000rpm for 50" (same trick)
- bake hot plate setpoint 150°C, 15'
- UV III, (Quantronics batch, filled on the 02/2014 but expired on the 03/2005) 
@ 4000 rpm for 50" (same trick)
- bake hot plate setpoint 140°C, 90 sec.

- ion mill 3mA 500V, 2x 10" @ 0° (both)
- Ti pump ([email protected]/s) -> P_ch = 4e-8
- Al 32nm @ 1nm/s, 0°, P_ev = 4e-7mb
- ox 5'@ 100mb
- Al 0.78nm @ 0.1nm/s, 0°
- ox 5' @ 100mb
- Ti pump -> P_ch = 8e-8
- Al 60nm @ 1nm/s, P_ev = 4e-7mb

- ion mill 3mA 500V, 2x 10" @ 0° (both)
- Al 30nm @ 1nm/s, 0°, P_ev = 7e-7mb
- ox 5'@ 800mb
- Al 0.63-0.69nm @ 0.1nm/s, 0°
- ox 5' @ 800mb
- Ti pump -> P_ch = 2e-7
- Al 60nm @ 1nm/s, P_ev = 4e-7mb