2014-11

2014-11Edit

JJoxv5_7 (poubelle)

exp: 30keV (25/11/2014)
dev: 1', stop IPA 1'
Ashing: 1 min @ 100 W, 0.2 mbar O2.
evap: ion milling 2x10" 3mA 500V, Al 30nm 0° 1 nm/s, dynamic oxydation 0.8 Torr for 5 min, Al 0.6 nm 0° 0.1 nm/s, dynamic oxydation 0.8 Torr for 5 min, Al 60 nm +40°. (26/11/2014)
Lift-off: PG remover at 65°C for 1 hour. No US.
Probe station: All 4 junctions are short circuited given the resistance was throughout less than 100 Ω.
SEM: JJOXV5_7.zip junction B,C,D are clearly connected whereas a short is difficult to spot on junction A. The central test strucutres look fine. Increase indercut box by around 100 nm to the left of the island.

 

JJoxv5_8 (poubelle)

exp: 30keV (26/11/2014)
dev: 1', stop IPA 1'
Ashing: 1 min @ 100 W, 0.2 mbar O2.
evap: ion milling 2x10" 3mA 500V, Al 30nm -5° 1 nm/s, dynamic oxydation 0.8 Torr for 5 min, Al 0.6 nm -5° 0.1 nm/s (problem with the rate, see Rate0p1nms.jpg), dynamic oxydation 0.8 Torr for 5 min, Al 60 nm +35°.
Lift-off: PG remover at 70°C for 1 hour. No US.
Probe station:

Only Junction B seems not to be short circuited with a Rn of around 6 kΩ.
SEM: JJOXV5_8.zip junction A,C,D are clearly connected and also junction B seems to be connected. Overlap area of Junction B=(240 x 835) nm².

JJoxv5_9 (poubelle)

exp: 30keV (27/11/2014)
dev: 1', stop eth:IPA 1'
no Ashing
evap: ion milling 2x10" 3mA 500V, Al 30nm 0° 1 nm/s, dynamic oxydation 0.8 Torr for 5 min, Al 0.6 nm 0° 0.1 nm/s (0.64nm at shutter close), dynamic oxydation 0.8 Torr for 5 min, Al 60 nm +40°.
Lift-off: PG remover at 70°C for 1 hour. No US.
Probe station:

Rserie ~ 1.0048MΩ, Rtot ~5.218MΩ
numbers in red indicate measurements done with 1.007kΩ series resistance / 4.218MΩ total (to have precision on few hundred Ω)
SEM: JJOXV5_9.zip versus designs
Junction B and C look fine. Junction A and D could be short circuited but it is difficult to tell. All junctions have a large chunk of resist residues, except A. Overlap areas: A=1040 x 240 nm2, B=810 x 195 nm2, C=610 x 190 nm2, D=260 x 435 nm2.

Ashing 3' @ 100W

Shunted junction C on purpose with light, then observed in SEM and could see no modification. 
Could not shunt it by putting potentiometer in "measure" mode beofre laying down the probes on the contacts.

Make design for the capacitance measurements

CAP1 (Al2O3-RIE_1)

exp: 30keV
dev: 1', stop IPA 1'
evap: ion milling 2x10" 3mA 500V / Al 60nm 0° 
RIE: 400V (5', 10µb)
Lift: 30' in 60°C remover PG + US 1' at the end : OK (not OK before US)
left: before lift, rigth after lift

Spin double layer MMA EL10 2krpm / PMMA A6 5krpm (with edge removal spin)
exp: 25keV. Awful to realign, easier at 25keV and with Spot 3.
dev: 1', stop IPA 1'
Should add ashing 2' 100W to the next ones
evap: Al 90nm @ 1nm/s 0°
lift remover PG 60°C + US: OK
RLC-bridge:
SEM: CAP1.zip (Note: The corner without an alignment cross is always on the top right for all following images as shown on top of this page for the design. A-H labels the capacitances from top to bottom.) .Dimension of capacitors: 8.72 um x 560 nm. No "explosions" visible after capacitance was measured. Surface roughness (under 30° angle):

CAP2 (Al2O3-ALD_1)

exp: 30keV
dev: 1', stop IPA 1'
evap: ion milling 2x10" 3mA 500V / Al 60nm 0° 
ALD at LPN: 5nm @ 150°C
lift: PG for 4 h and US for 30 s at lowest power.
opt. microscope: BPCT_CAP2_5nm.zip . The third capacitor-line from the top and also from the bottom are probably broken.
Ashing: 2 min at 100 W with 0.2 mbar O2.
opt. microscope: BPCT_CAP2_5nm.zip . Optically no change was visible before and after ashing.
Spin: double layer MMA EL10 @ 4 krpm for 1 min with 5 min at 180°C postbake / PMMA A4 5 krpm for 1 min with 15 min at 180°C postbake (with edge removal spin: 5sec 500 / 750 rpm, 45 sec 4000 / 5000 rpm, 10 sec 8000 rpm).
exp: 25keV, Spot 1.
dev: 1', stop IPA 1'.
Ashing: 2 min at 100 W with 0.2 mbar O2.
evap: ion milling 2x10" 3mA 500V / Al 90nm 0°
lift: PG for 3 h at 70°C and US for 30 s at lowest power. BPCT_CAP2_5nm.zip

CAP3 (Al2O3-ALD_2)

exp: 30keV
dev: 1', stop IPA 1'
evap: ion milling 2x10" 3mA 500V / Al 60nm 0° 
ALD at LPN: 10nm @ 150°C
lift: PG for 4 h and US for 30 s at lowest power.
opt. microscope:  BPC_CAP3_10nm.zip. All capacitor-lines look fine.
Ashing: 2 min at 100 W with 0.2 mbar O2.
opt. microscope: BPC_CAP3_10nm.zip. Optically no change was visible before and after ashing.
Spin: double layer MMA EL10 @ 4 krpm for 1 min with 5 min at 180°C postbake / PMMA A4 5 krpm for 1 min with 15 min at 180°C postbake (with edge removal spin: 5sec 500 / 750 rpm, 45 sec 4000 / 5000 rpm, 10 sec 8000 rpm).
exp: 25keV, Spot 1.
dev: 1', stop IPA 1'.
Ashing: 2 min at 100 W with 0.2 mbar O2.
evap: ion milling 2x10" 3mA 500V / Al 90nm 0°
lift: PG for 3 h at 70°C and US for 30 s at lowest power.BPC_CAP3_10nm.zip

CAP4 (Al2O3-?)

exp: 30keV, Spot1
dev: 1', stop IPA 1'.
Ashing: 2 min at 100 W with 0.2 mbar O2.
evap: ion milling 2x10" 3mA 500V / Al 30nm 0°

CAP5 (Al2O3-?)

exp: 30keV, Spot1
dev: 1', stop IPA 1'.
Ashing: 2 min at 100 W with 0.2 mbar O2.
evap: ion milling 2x10" 3mA 500V / Al 30nm 0°

BPC3_res

single resonator without ground plane, cut with the the new laser cutter (No BPC added)
To measure the internal Q of the new trilayer wafer BPC3
Bonded on the 18/11/2014, then damaged. Bonded another one which was cut with dicer only. After bonding:

mardi 18/11

Prepare real samples for ALD

BPC2v5_2 (1 res)

exp BPC_step 2: 30keV, Spot1
dev: 1'30, stop IPA:eth 1:1 30", IPa 30", ODI 15", MIF726 1', ODI 1', eth 15"
Ashing: 2 min at 100 W with 0.2 mbar O2.
evap: ion milling 2x10" 3mA 500V / Al 30nm 0°
ALD (LPN, 26/11): 10nm HfO₂ @ 150°C
Lift-off: PG remover for around 2 h at 70°C. Using US for around 2 min in total. Was difficult to strip.
opt. images: BPC2v5_2.zip
Spin: hot plate 110°C for 1min (getting rid of H20) right before the spinning:

- spin MAA8.5 EL10 (batch 14020103, exp. 3/1/2015) @ 2000rpm for 45"
5" 500rpm 200rpm/s + 45" 2000rpm 1000rpm/s + 10" 8000rpm 4000rpm/s (edge removal)
- bake hot plate setpoint 180°C, 5'
- spin PMMA A6 (batch 14020103, exp. 3/1/2015) @ 5000rpm for 45" (same trick)
- bake hot plate setpoint 180°C, 15'

exp BPC_step 3a (alignement marks only, to reveal and align precisely): (27/11) 30keV, Spot1
dev: 1', stop IPA 1'
exp BPC_step 3b (patterns): 30keV, Spot1
dev: 1', stop eth:IPA (1:1) 1'
The patterns seems to be veery well aligned (I would say to +/-50nm, because of the precision on the mark itself -a bit deformed), the small alignement mark could be seen very clearly on top of the trilayer, but not on Si. For next generations, will have to do small alignement marks of step 2 only on trilayer.
 Moreover, after the second development, the marks are developped on ~10µm, which shunts resonator, and more annoyingly the gate.
I thus decide to reprocess the chip, but the procedure works!
/!\ for above, and for _3 and _4, the PMMA layer should have been spun at 6000rpm to comply with previous tests
However, I think this might not be a big issue, maybe a few 10th of nm difference /!\

exp BPC_step 3a (marks) (08/12) 30keV, Spot1
dev: 1', stop IPA 1'
exp BPC_step 3b (patterns): 30keV, Spot1
dev: 1', stop eth:IPA (1:1) 1'
asher: 1', 100W, 200µb O₂
evap: vieux canon. Note 1: crucible just filled by Pief the week before. Note 2: Ar/O2 bottle almost empty.

- ion mill 3mA 500V, 2x 10" @ 0° (both)
- Ti pump ([email protected]/s) -> P_ch = 4e-8
- Al 32nm @ 1nm/s, 0°, P_ev = 4e-7mb
- ox 5'@ 100mb
- Al 0.78nm @ 0.1nm/s, 0°
- ox 5' @ 100mb
- Ti pump -> P_ch = 8e-8
- Al 60nm @ 1nm/s, P_ev = 4e-7mb

lift PG remover 76°C. Stays all night, but does not lift with pipette. Have to sonicate for 10". 
asher 2' @ 100W, 200µb O₂
Obs Catastrophe. Alignement is perfect, but boxes are shunted. Blanking problem probably, which is enhanced by the 2 step processing (maybe residues of developper fragilize the resist)

BPC2v5_3 (2 res)

exp BPC step2: 30keV, Spot1
dev: 1'30, stop IPA:eth 1:1 30", IPa 30", ODI 15", MIF726 1', ODI 1', eth 15"
Ashing: 2 min at 100 W with 0.2 mbar O2.
evap: ion milling 1', 3mA 500V / Al 25nm 0°
ALD: 10nm HfO₂ @ 150°C
Lift-off: PG remover for around 2 h at 70°C. Using US for around 1 min in total.
opt. images: BPC2v5_3.zip . The lumped element interdigitated capacitor of Resonator1 is short circuitet.
Spin: see BPC2v5_3 (2 res)
exp BPC_step 3a (alignement marks only): (28/11) 30keV, Spot1
dev: 1', stop IPA 1'
bake 5' @ 100°C

BPC2v5_4 (no ground plane)

exp BPC step2: 30keV, Spot1
dev: 1'30, stop IPA:eth 1:1 30", IPa 30", ODI 15", MIF726 1', ODI 1', eth 15"
Ashing: 2 min at 100 W with 0.2 mbar O2.
evap: ion milling 1', 3mA 500V / Al 25nm 0°
ALD (LPN, 26/11): 10nm HfO₂ @ 150°C
Lift-off: PG remover for around 2 h at 70°C. Using US for around 1 min in total.
opt. images: BPC2v5_4.zip
Spin: see BPC2v5_3 (2 res)
 

NOTE: THE SEMs were maintained during 19-20th of November 2014.