2015-02

2015-02Edit

JJoxv5_23

asher: 1', 100W, 200µb O₂
evap:

- Ti pump 150 nm
- P_init = 5.0x10-8 mbar
- ion mill 3mA 500V, 2x 10" @ -90°/-55°
- Al 30nm @ 1nm/s, 0°, P_ev = (3.6 +/- 0.3)x10-7 mbar
- ox 5'@ (200 +/- 1) mbar
- Al 60nm @ 1nm/s, +35°, P_ev = (6.2 +/- 0.4)x10-7 mbar
- Au, 20nm @ 1nm/s, -35°, P_ev = (5.9 +/- 0.3)x10-7 mbar
- Ox vent

lift: PG remover 65°C, 20min
asher: 2', 100W, 200µb O₂
Probe Station (02/02):

SEM: JJoxy_23.zip

BPC2v4_7

exp step 2 (02/02): CPB_v4_res1 & CPB_v4_res2 30 kV, Spot1, 22 pA. (XL30S), only gates. Increased dose of alignement marks to 1.25.
dev: MIBK/IPA=90s, IPA=30s, ODI=15s, MIF726=30s, ODI=60s, Ethanol=15s, N2 dry.
Ashing: 100 W, 0.2mbar Ox, 1min. This was mainly done for the alignement marks as previous samples did not show all 4 marks needed for the third step.
u-scope: Looks perfectly fine with a small undrcut
Evap: ion mill 2x10" @ -90°, Al 1nm/s 60nm @ 0°
Lift-off: PG remover at 65°C
Inspection: Looks fine. All marks are there!
Spin (02/02/2015):

- spin MAA8.5 EL10 (batch 14020103, exp. 3/1/2015) @ 2000rpm for 45"
 (with edge removal)
- bake hot plate setpoint 180°C, 5'
- spin PMMA A6 (batch 14020103, exp. 3/1/2015) @ 6000rpm for 45" (same trick)
- bake hot plate setpoint 180°C, 15'

exp step 3a (03/02): CPB_v4_res1 & CPB_v4_res2 30 kV, Spot1, 22 pA. (XL30S), exposure marks with dose 1.3.
dev: MIBK/IPA=60s, IPA:Ethanol=1:1=60s, IPA=60s, N2 dry.
u-scope: Looks fine.
exp step 3b: CPB_v4_res1 & CPB_v4_res2 30 kV, Spot1, 22 pA. (XL30S).
dev: MIBK/IPA=60s, IPA:Ethanol=1:1=60s, IPA=60s, N2 dry.
u-scope: Looks fine. Nicely centered islands.
Asher: 1', 100W, 200µb O₂
Evap: 

- P_init = 2.8x10-7 mbar
- ion mill 3mA 500V, 2x 10" @ -90°/-55°
- Al 30nm @ 1nm/s, 0°, P_ev = (6.1 +/- 0.3)x10-7 mbar
- ox 5'@ (55 +/- 1) mbar
- Ti pump for 150nm. P_final=5.0x10-8 mb
- Al 60nm @ 1nm/s, +35°, P_ev = (3.2 +/- 0.1)x10-7 mbar
- Cu 15nm @ 1nm/s, -35°, P_ev = (4.7 +/- 0.2)x10-7 mbar
- Ox vent

Lift-off: PG remover, 65°C
Asher: 2', 100W, 200µb O₂ (Cu did not like the ashing...)
u-scope: BPCv4_7.zip

Res0:

Res1:

JJoxv5_24

asher: No ashing to avoid the connection to the third angle evaporated Copper layer as observed for JJoxv5_23.
evap:

- P_init = 4.5x10-8 mbar
- ion mill 3mA 500V, 2x 10" @ -90°/-55°
- Al 30nm @ 1nm/s, 0°, P_ev = (7.2 +/- 0.2)x10-7 mbar
- ox 5'@ (50 +/- 1) mbar
- Ti pump, 100 nm, p_final = 5.4x10-8 mb
- Al 60nm @ 1nm/s, +35°, P_ev = (3.9 +/- 0.1)x10-7 mbar
- Cu, 15nm @ 1nm/s, -35°, P_ev = (5.5 +/- 0.3)x10-7 mbar
- Ox vent

lift: PG remover 65°C, 20min
asher: No.
Probe Station (05/02):

SEM: JJox24.zip

BPC2v4_8

exp step 2 (04/02): CPB_v4_res1 & CPB_v4_res2 30 kV, Spot1, 22 pA. (XL30S), only gates. Increased dose of alignement marks to 1.30.
dev: MIBK/IPA=90s, IPA=30s, ODI=15s, MIF726=30s, ODI=60s, Ethanol=15s, N2 dry.
Ashing: 0.2mbar Ox, 1min, 50 W. This was mainly done for the alignement marks as previous samples did not show all 4 marks needed for the third step.
u-scope: Looks perfectly fine with a small undrcut
Evap: Ti-pump 150nm, p_ini = 5.3x10-8 mb, ion mill 2x10" @ -90°, Al 1nm/s 60nm @ 0, p_ev = (3.9 +/- 0.3)x10-7 mb, Ox vent.
Lift-off: PG remover at 65°C
Inspection: Looks fine. All marks are there!
Spin (02/02/2015):

- spin MAA8.5 EL10 (batch 14020103, exp. 3/1/2015) @ 2000rpm for 45"
 (with edge removal)
- bake hot plate setpoint 180°C, 5'
- spin PMMA A6 (batch 14020103, exp. 3/1/2015) @ 6000rpm for 45" (same trick)
- bake hot plate setpoint 180°C, 15'

exp step 3a (03/02): CPB_v4_res1 & CPB_v4_res2 30 kV, Spot1, 22 pA. (XL30S), exposure marks with dose 1.3. Eline Software crashed during exposure...
dev: MIBK/IPA=60s, IPA:Ethanol=1:1=60s, IPA=60s, N2 dry.
u-scope: Looks fine
exp step 3b: CPB_v4_res1 & CPB_v4_res2 30 kV, Spot1, 22 pA. (XL30S).
dev: MIBK/IPA=60s, IPA:Ethanol=1:1=60s, IPA=60s, N2 dry.
u-scope: Looks fine, except Res0 looks a bit over-developed (decided not to do ashing because of that). Nicely centered islands.
Asher: No.
Evap: Together with JJoxv5_24
Lift-off: PG remover, 65°C for 2 h, IPA (recommended in the datasheet), DI water.
Asher: No
u-scope: BPCv4_8.zip

Res0 seems to fine but the double exposure due to the crash of the software is visible:

the dark layer is Cu and it looks like due to the unwanted double exposure, the JJ has a Cu-QP-trap on each side now. There are also some resist residues on the gates. Overlap area is half compared to BPC2v4_6 (probably due to the skipped ashing step).