2015-01

2015-01Edit

JJoxv5_16

dev: 1', stop eth:IPA (1:1) 1', 1' IPA. N2 blow dry.
asher: 1', 100W, 200µb O₂
evap (08/01) vieux canon

-P_init = 3.1e-7 mbar
- ion mill 3mA 500V, 2x 10" @ -90°/-55°
- Al 30nm @ 1nm/s, 0°, P_ev = (7.7 +/- 0.3)e-7 mbar
- ox 5'@ (797 +/- 1) mbar (it takes around 30s to reach around 800mbar and another 30s
adjust. It takes 30s to pump from 800mbar to less than 100mbar.)
- Al 0.62 @ 0.1nm/s, 0°
- ox 5' @ (798 +/- 1)
- Al 60nm @ 1nm/s, +35°, P_ev = (8.7 +/- 0.2)e-7 mbar (weird, usually the second angle evap
has a lower chamber pressure...)
- Ox vent

lift PG remover 65°C, 1h
asher 2' @ 100W, 200µb O₂
Probe Station (08/01):

SEM: JJox5_16.zip
Obs: - The surface of the Al layer was covered with little droplets (100-300 nm diameter). Wash lift-off-beaker with acetone/IPA the next time.

- two large connecting leads are disconnected (for pad 10 and 13).
-Junction D is cleary shunted but junction C should be fine given the SEM image.
-overlap areas: A=270 x 1100 nm2, B=230 x 870 nm2, C=225 x 680 nm2. As a comparison: A junction of JJox5_14 had an overlap area of 240x960nm² and a Rn of somewhere around 100 kΩ (check that...) with the same oxydation parameters. This means that JJox5_15 has a significantly lower Rn.

-Undercut box still has a too high dose, use 0.25 instead of 0.3 (Note: It turned out that the undercut box for junction A was doubled. So D=0.3 for the undercut-boxes is fine.). Furthermore, it looks like the "wiggles" on the island on which are vertically located near the beginning of the overlap area,  could come from the subdivision of the undercutbox during the exposure (see Blanker Test on XL30S above). Using line-mode or only drawing single rectangular undercut boxes might solve this problem.

JJoxv5_17

dev: 1', stop eth:IPA (1:1) 1', 1' IPA. N2 blow dry.
asher: No ashing as cleanroom was closed.
evap (09/01) vieux canon

-Ti pumping
- P_init = 5.0e-8 mbar
- ion mill 3mA 500V, 2x 10" @ -90°/-55°
- Al 30nm @ 1nm/s, 0°, P_ev = (5.3 +/- 0.4)e-7 mbar
- ox 5'@ (803 +/- 1) mbar
- Al 0.64 @ 0.1nm/s, 0°
- ox 5' @ (799 +/- 1)
- Al 60nm @ 1nm/s, +35°, P_ev = (9.5 +/- 0.5)e-7 mbar (weird, usually the second angle evap
has a lower chamber pressure...)
- Ox vent

lift (12/01/2015): PG remover for 20min at 65°C. No US. 
Ashing: 2min, 0.2mbar O2, 100W.
Probe Station:

SEM: JJOX5_17.zip

Conclusions:
-Junction B and D are disconnected which is clearly visible on in the SEM image. It turned out that the area where it broke was in a unfavoured polygon shap. This was changed afterwards by replacing them with two rectangles.
-A still unsolved problem are the the very diformed edges of the structure, like this one:

Possible solution: increasing the dose of the main structure and/or using u-boxes that extend by 100nm on each side of the main structure's outline (the u-boxes at the moment are aligned to the outline of the main structures).

Dose test on XL30 (oxDtest1)

exp (12/01): Undercut-boxes everywhere around the leads (like a frame) BUT instead of aligning them to the outline of the main structure I placed them such that the u-box extends by 100nm on each side of the outline. There was a problem with the electrical contact of the Amp-meter to the stage-holder, solved by cleaning the contact with IPA. 30keV; Spot 1, JJoxy-design but only layer 2,4,5. U-box-dose=0.3, Dose of layer 2 was changed by +10%, +20% and +30%.

dev: 1', stop eth:IPA (1:1) 1', 1' IPA. N2 blow dry.
asher: 1', 100W, 200µb O₂
Au sputtering: 2x30s
SEM: oxDtest1.zip
Conclusion: -As a reference, the JJoxyV5_17 design was also exposed. The difference for the same dose between this reference design (left image) and the oxDtest1 with the overlapping u-boxes (right image) gives a cleaner edge:

-there was no significant difference visible for the structures with increased dose for layer 2, except that the width of the island is slightly increase.
-Obviously the the dose of the U-box is too large. Do a D-test for U-box.

Dose test on XL30 (oxDtest2)

exp (13/01): Same as for oxDtest above but with a dose test on the U-boxes by applying a dose factor f such that D=f*0.3. 30keV; Spot 1, JJoxy-design but only layer 2,4,5. The dose for layer 1: Junction A-D=1.2 and central structures = 1.3.
dev: 1', stop eth:IPA (1:1) 1', 1' IPA. N2 blow dry.
asher: 1', 100W, 200µb O₂
Evap: ion mill 10" each @ -90°/-55°, gold 1nm/s 30nm @ 0° and 60nm @ 35°
SEM: See folder "mask" on oxDtest2.zip
Lift-off: PG remover at 65°C
SEM: See folder "DoubleAu" on oxDtest2.zip
Conclusion: SummaryOxDtest.pptx

Dose test on e-line

Exposure 30keV, aperture 20µm, field x2000-50µm
The dose test is composed of the 3 types of structures that are used in JJox (the 2 central designs for CPB + the connected JJs)
The main pattern (layer 2) is varied from 1.1 to 1.4 (big designs) and from 0.8 to 1.1 (island) in step of 0.1
For each of these, the undercut boxes are varied from 0.3 to 0.4 in step of 0.05

Dev 1' MIBK + 1' IPA
Evap ion mill 20" @ 90°, gold 1nm/s 30nm @ 0° + 60nm @ 35°
Observation ELINETD1.zip
Lift remover PG 30'
Observation

BPC2v5_4

- P_init = 1.2e-7 mbar
- Ti pump -> P = 6.6e-8mb
- ion mill 3mA 500V, 2x 10" @ -90°/-60°
- Al 30nm @ 1nm/s, 0°, set P_ev = 1e-6 mbar with Ar/O2 (set before evap, remains during evap)
- ox 5'@ (100 +/- 1) mbar (it takes around 5' more to pump back before opening depos)
- Al 0.7 @ 0.1nm/s, 0°
- ox 5' @ (100 +/- 1)
- Al 60nm @ 1nm/s, +35°, P_ev = 5e-7 mbar

BPC2v4_3

exp (15/01): CPB_v4_res1-design Step2. 30 kV, Spot1, 22 pA. (XL30S).
dev: MIBK/IPA=90s, IPA=30s, ODI=15s, MIF726=30s, ODI=60s, Ethanol=15s, N2 dry.
No asher.
Evap: ion mill 2x10" @ -90°, Al 1nm/s 60nm @ 0°
Lift-off: PG remover at 65°C
Inspection: detector capacitor is disconnected

BPC2v4_4

exp step 2 (16/01): CPB_v4_res1 30 kV, Spot1, 22 pA. (XL30S). 
dev: MIBK/IPA=90s, IPA=30s, ODI=15s, MIF726=30s, ODI=60s, Ethanol=15s, N2 dry.
u-scope: The capacitors were not exposed, maybe forgot to unblank or something like that as the alignement marks were clearly exposed.
re-exp step 2 (16/01):  30 kV, Spot1, 22 pA. (XL30S). 
dev: MIBK/IPA=90s, IPA=30s, ODI=15s, MIF726=30s, ODI=60s, Ethanol=15s, N2 dry.
u-scope: Looks perfectly fine with a small undrcut
No asher.
Evap: ion mill 2x10" @ -90°, Al 1nm/s 60nm @ 0°
Lift-off: PG remover at 65°C
Inspection: Looks fine.
Spin (19/01/2015):

- spin MAA8.5 EL10 (batch 14020103, exp. 3/1/2015) @ 2000rpm for 45"
 (with edge removal)
- bake hot plate setpoint 180°C, 5'
- spin PMMA A6 (batch 14020103, exp. 3/1/2015) @ 6000rpm for 45" (same trick)
- bake hot plate setpoint 180°C, 15'

exp step 3 (19/01): CPB_v4_res1 30 kV, Spot1, 22 pA. (XL30S). 
dev: MIBK/IPA=60s, IPA:Ethanol=1:1=60s, IPA=60s, N2 dry.
u-scope: Looks fine
Ashing: 100W, 0.2mbar O2, 1min
Evap: Together with JJoxv5_18

- Ti pumping, 100nm
- P_init = 6.0x10-8 mbar
- ion mill 3mA 500V, 2x 10" @ -90°/-55°
- Al 30nm @ 1nm/s, 0°, P_ev = (7.6 +/- 0.4)x10-7 mbar
- ox 5'@ (798 +/- 1) mbar
- Al 0.61 @ 0.1nm/s, 0°
- ox 5' @ (800 +/- 1) mbar
- Al 60nm @ 1nm/s, +35°, P_ev = (9.5 +/- 0.5)x10-7 mbar (weird, usually the second angle evap
has a lower chamber pressure...)
- Ox vent

Lift-off (20/01/2015): Acetone, 50°C
u-scope: Add pics. Island is too close to detector capacitor and is touching it.

JJoxv5_18

dev: 1', stop eth:IPA (1:1) 1', 1' IPA. N2 blow dry.
u-scope: Looks fine

asher: 100W, 0.2mbar O2, 1min
evap (19/01): Together with CPB_v4_res1
Lift-off (20/01/2015): Acetone, 50°C
No ashing (cleanroom was closed on this day).
Probe station (20/01/2015):

Rb=5.221 MOhm

u-scope: JJox5_18.zip

BPC4 wafer

Optical litho (16/01)

- spin AZ5214E 4000rpm 60"
- bake 1' @ 115°C (setpoint)
- expo 6" MJB4
- bake 2'30 @ 125°C (setpoint)
- flood expo 25"
- dev 50" in MF CD 26

NB: was reprocessed. Either because resist is perempted or because first bake was too high, the patterns did not appear at reversal bake (not good). We thus increased the dose for the first exposure to 6" instead of 3" for a large undercut.

Ashing: 2min, 100W, 0.2mbar Ox.
Evap nouveau canon SPEC
Al 100 

Pumped 2h -> P_sas=1.5e-7 / P_ch=9e-8
- Ti pump m @ 0.2nm/s -> P_sas = 7e-8 / P_ch = 3.3e-8mb (gun off)
- Al 100nm @ 1nm/s, 5°, spin 16°/s. P_evap  = 2.7 / 2.2e-7 

Lift Warm aceton 1h + ultrasounds. Remainings of small dots in the center of the wafer
Spin step 2
Had to reprocess the e-beam resist spinning twice:

- spin MAA8.5 EL10 (batch 14020103, exp. 3/1/2015) @ 2000rpm for 45"
- bake setpoint 180°C, 6'
- spin PMMA A6 (batch 14020103, exp. 3/1/2015) @ 4000rpm for 45" (same trick to remove edges)
- bake hot plate setpoint 180°C, 16'
- UVIII (Quantronics batch) @ 4000rpm for 60"
- bake setpoint 140°C, 90 seconds

NOTE that PIEF found out on 19/01 that the Al crucible was polluted with an inclusion of unknown nature TBD (RBS, CSNSM next march)

BPC5 wafer

Optical litho (16/01)

- spin AZ5214E 4000rpm 60"
- bake 1' @ 110°C (setpoint)
- expo 6" MJB4
- bake 2'30 @ 125°C (setpoint)
- flood expo 25"
- dev 50" in MF CD 26

BPC2v4_5

exp step 2 (20/01): CPB_v4_res1 and CPB_v4_res2 30 kV, Spot1, 22 pA. (XL30S). Q-type with two resonators.
dev: MIBK/IPA=90s, IPA=30s, ODI=15s, MIF726=30s, ODI=60s, Ethanol=15s, N2 dry.
u-scope: looks fine
No asher.
Evap: ion mill 2x10" @ -90°, Al 1nm/s 60nm @ 0°
Lift-off: PG remover at 65°C
Inspection: Looks fine but some marks are missing.
Spin (20/01/2015):

- spin MAA8.5 EL10 (batch 14020103, exp. 3/1/2015) @ 2000rpm for 45"
 (with edge removal)
- bake hot plate setpoint 180°C, 5'
- spin PMMA A6 (batch 14020103, exp. 3/1/2015) @ 6000rpm for 45" (same trick)
- bake hot plate setpoint 180°C, 15'

exp step 3 marks only (21/01): CPB_v4_res1 and CPB_v4_res2 30 kV, Spot1, 22 pA. (XL30S). Q-type with two resonators. Expose smallest marks with dose 1.2 to make them better visible.
dev: MIBK/IPA=60s, IPA:Ethanol=1:1=60s, IPA=60s, N2 dry.
exp step 3 marks only (21/01): CPB_v4_res1 and CPB_v4_res2 30 kV, Spot1, 22 pA. (XL30S)
dev: MIBK/IPA=60s, IPA:Ethanol=1:1=60s, IPA=60s, N2 dry.
u-scope: looks fine, but possibly silighly off center. try +2°/+37° evaporation to correct for it.
Asher: 1min, 100 W, 0.2 mbar O2.
Evap:

- Ti pumping, 150nm
- P_init = 4.1x10-8 mbar
- ion mill 3mA 500V, 2x 10" @ -88°/-53°
- Al 30nm @ 1nm/s, +2°, P_ev = (4.5 +/- 0.3)x10-7 mbar
- ox 5'@ (799 +/- 1) mbar
- Al 0.66 @ 0.1nm/s, +2°
- ox 5' @ (803 +/- 1) mbar
- Al 60nm @ 1nm/s, +37°, P_ev = (8.3 +/- 0.4)x10-7 mbar
- Ox vent

lift PG remover 65°C,
Asher: 2min, 100 W, 0.2 mbar O2.
Obs: res0 pattern is shunted, res1 pattern is OK. BPC2v4_5.zip

JJoxv5_19

dev (22/01): 1', stop eth:IPA (1:1) 1', 1' IPA. N2 blow dry.
asher: 1', 100W, 200µb O₂
evap (22/01) vieux canon

-P_init = 3.1e-7 mbar
- ion mill 3mA 500V, 2x 10" @ -125°/-55°
- Al 30nm @ 1nm/s, 0°, P_ev = (6.3 +/- 0.3)e-7 mbar
- ox 5'@ (700 +/- 1) mbar
- Al 0.71-0.75 nm @ 0.1nm/s, 0°, time-out issue
- ox 5' @ (704 +/- 1) mbar
- Ti pump 100nm -> p = 2.0e-7 mbar
- Al 60nm @ 1nm/s, +35°, P_ev = (5.3 +/- 0.3)e-7 mbar
- Au, 15nm, -35°; 1nm/s, P_ev = (9.0 +/- 0.3)e-7 mbar

lift Aceton 45°C, 20min
No asher to protect the Au layer
Probe Station (22/01):

SEM: JJox19.zip
Obs: Overlap areas: A=215 x 1030 nm2, B=200 x 820 nm2, C=185 x 640 nm2, D=195 x 465 nm2
Generally there are a lot of resist residues around the junction.
The u-boxes for the Au-layer are not large enough.

JJox_cen1

Exposure: Labelling row: a-d, column: 1-5. Design upside down on:

dev: 1', stop eth:IPA (1:1) 1', 1' IPA. N2 blow dry.
asher: 1', 100W, 200µb O₂
evap (23/01) vieux canon

-P_init = 5.5e-7 mbar
- ion mill 3mA 500V, 2x 10" @ -90°/-55°
- double Au evaporation: 30nm each @ 1nm/s, 0° and +35°, P_ev = (9.8 +/- 0.2)e-7 mbar

lift PG remover 65°C, 1h
No asher.
Obs: JJox_c1.zip
Labelling: row: a-d. column: 1-5. Design 1 on row 1, design 2 on row b and c, design 3 on row d. This was exposed on three different positions on the chip.

JJoxv5_20

asher: 1', 100W, 200µb O₂
evap (27/01) vieux canon

-Ti pu,p 150 nm
- P_init = 6.0e-8 mbar
- ion mill 3mA 500V, 2x 10" @ -90°/-55°
- Al 30nm @ 1nm/s, 0°, P_ev = (6.0 +/- 0.5)e-7 mbar
- ox 5'@ (72 +/- 1) mbar, SINGLE oxidation.
- Al 60nm @ 1nm/s, +35°, P_ev = (8.0 +/- 0.5)e-7 mbar
- Ox vent

lift (28/01): PG remover 65°C, 20min
asher: 2', 100W, 200µb O₂
Probe Station (28/01):

BLUE values only subtract the raw (measured) lead (1-2 & 3-4) resistance
RED values account for the numbers in parenthesis (variations of the series resistance)
Anyways we should do a 4 PROBE (would be quicker and more reliable)
SEM: JJoxy_20.zip

JJoxv5_21

asher: 1', 100W, 200µb O₂
evap vieux canon

-Ti pu,p 150 nm
- P_init = 5.1e-8 mbar
- ion mill 3mA 500V, 2x 10" @ -90°/-55°
- Al 30nm @ 1nm/s, 0°, P_ev = (5.0 +/- 0.3)e-7 mbar
- ox 5'@ (102 +/- 0.5) mbar, SINGLE oxidation.
- Al 60nm @ 1nm/s, +35°, P_ev = (7.4 +/- 0.3)e-7 mbar
- Ox vent

lift: PG remover 65°C, 20min
asher: 2', 100W, 200µb O₂
Probe Station (29/01):

SEM: JJoxy_21.zip

BPC2v4_6

exp step 2 (28/01): Double Q-type resonator. Gates from CPB_v4_res1 and CPB_v4_res1 design. 30 kV, Spot1, 22 pA.
dev: MIBK/IPA=90s, IPA=30s, ODI=15s, MIF726=30s, ODI=60s, Ethanol=15s, N2 dry.
u-scope: Looks perfectly fine with a small undrcut
No asher.
Evap: ion mill 2x10" @ -90°, Al 1nm/s 60nm @ 0°
Lift-off (29/01): PG remover at 65°C
Inspection: Looks fine.
Spin (29/01/2015):

- spin MAA8.5 EL10 (batch 14020103, exp. 3/1/2015) @ 2000rpm for 45"
 (with edge removal)
- bake hot plate setpoint 180°C, 5'
- spin PMMA A6 (batch 14020103, exp. 3/1/2015) @ 6000rpm for 45" (same trick)
- bake hot plate setpoint 180°C, 15'

exp step 3 (29/01): Exposure marks30 kV, Spot1, 22 pA. (XL30S). 
dev: MIBK/IPA=60s, IPA:Ethanol=1:1=60s, IPA=60s, N2 dry.
exp step 3 (29/01): Exposure CPB_v4_res1 and CPB_v4_res1, 30 kV, Spot1, 22 pA. (XL30S). 
dev: MIBK/IPA=60s, IPA:Ethanol=1:1=60s, IPA=60s, N2 dry.
u-scope: Looks fine and the islands are centered within the detector gates.
Ashing: 100W, 0.2mbar O2, 1min
Evap (30/01): Overnight pumping. Together with JJoxv5_22.

- P_init = 2.8 x 10-7 mbar
- ion mill 3mA 500V, 2x 10" @ -90°/-55°
- Al 30nm @ 1nm/s, 0°, P_ev = (5.3 +/- 0.3)x10-7 mbar
- ox 5'@ (151 +/- 1) mbar
- Al 60nm @ 1nm/s, +35°, P_ev = (5.6 +/- 0.5)x10-7 mbar
- Ox vent

Lift-off (30/01/2015): PG remover 65°C, 120min
u-scope: BPC2v4_6.zip

asher: 2', 100W, 200µb O₂

JJoxv5_22

asher: 1', 100W, 200µb O₂
evap (30/01) vieux canon together with BPC2v4_6.
lift: PG remover 65°C, 20min
asher: 2', 100W, 200µb O₂
Probe Station (30/01):

SEM: JJoxy_22.zip

-Junction B & C are short circuited but the SEM images look perfectly fine.
-Surface resitance of Junction A & D are too low, they should be in the range of 500 Ohm*um2.
-central structures look fine.