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Physol Nano-Fab > Fabrication Databases > Chemicals > Resists > MaN
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MaN
MaNEdit

    under construction.gif

    datasheets on: (dead link) http://www.nanolithography.gatech.ed...cro_Resist.pdf

    • Properties:

    electro sensitive - negative resist (stays where exposed)
    εr=
    λ/2n=  nm

    • Dilution:

    solvent: solvent (add the solvent to Chemicals products list, and link here to safety datasheet)
    dilution recipe

    • Strip:

    chemicals:
            - stripper 1     (with link to safety datasheet located on subdirectory of Chemicals)
            - stripper 2
            - stripper 3

    Processing

    1.   Deposit:

    primer: Primer (special for something? e.g. gold or silicon or...)

    spin ” @  rpm (rise time  ”)
    spin  ” @  rpm (rise time  ”)     ~  nm layer

    resist: Resist name (link to chemicals datasheet)

    dispense 3 mL for 3 inches wafer

    spin ” @ rpm (rise time ”) to spread the resist over the wafer
    spin ” @ rpm (rise time ”) for a uniform coat

    spin parameters
    Dilution

    spin speed
    (rpm)

    after spin
    measured thickness
    (nm)

    final
    thickness
    center 
    (nm)

    final
    thickness
    sides
    (nm)
             
             
             
             

     

    2.  Post spin bake="Soft Bake"  (solvent evaporation)

    Hot plate 2’30 - 3’
    Temperature range: 75-85°C

     

    3.  Exposure:

    sur du GaAs:     µC/cm2 (/800nm layer)
    testé sur du chrome: 800 µC/cm2 pour motifs larges (>50µm)
                                     1000 µC/cm2 pour motifs fins (>1µm)

     

    5.  Development:

    developper: MIF726

    parameters //2008:
    -unexposed wafer  spinned at rpm (~µm), fringes disappear after 1’35.
    -exposed wafer, same parameters for all except exposure µC/cm2 (), development     ’. Final thickness µm.

    Rinse: ODI (water tap)

    9.  Descum:

    Eliminate residues (~100nm)

    RIE (O2 - SF6: )
    O2: cc
    SF6: cc
    P =  µbar  (input correct parameters)

       Voltage (V)  Power (W) Etching Speed (nm/s)
    before dev      
         
    after dev      
         

    10.  Recycle

    before exposure:

    -Aceton

    after exposure / cure:

    - Aceton
    - RIE (see table)
    - AR 300-70 ~10’ in warm bath (~70°C)

    11.  Supplementary info

    The resist series ma-N 400 and ma-N 1400 differ in the obtainable film thickness range, the sensitivity, the thermal stability of the resist patterns and in the profile of the formed undercut patterns.

    Product parameter - Overview

    Resist Thickness
    (3000 rpm, 30 s)    		 Resolution Wavelength
    ma-N 405 0.5 µm 1.0 µm Broadband
    i-line: 365 nm
    ma-N 415 1.5 µm 1.5 µm Broadband
    i-line: 365 nm
    ma-N 420 2.0 µm 1.5 µm Broadband
    i-line: 365 nm
    ma-N 440 4.0 µm 2.0 µm Broadband
    i-line: 365 nm
    ma-N 490 7.5 µm 4.0 µm Broadband
    i-line: 365 nm
           
    ma-N 1405 0.5 µm 1.0 µm Broadband
    i-line: 365 nm
    ma-N 1407 0.7 µm 1.0 µm Broadband
    i-line: 365 nm
    ma-N 1410 1.0 µm 1.5 µm Broadband
    i-line: 365 nm
    ma-N 1420 2.0 µm 1.5 µm Broadband
    i-line: 365 nm
    ma-N 1440 4.0 µm 3.0 µm Broadband
    i-line: 365 nm
           
    ma-N 2401 0.1 µm 0.2 µm (DUV)
    50 nm (e-beam)    		 248 / 254 nm
    E-Beam
    ma-N 2403 0.3 µm 0.2 µm (DUV)
    50 nm (e-beam)    		 248 / 254 nm
    E-Beam
    ma-N 2405 0.5 µm 0.3 µm (DUV)
    100 nm (e-beam)    		 248 / 254 nm
    E-Beam
    ma-N 2410 1.0 µm 0.5µm (DUV)
    150 nm (e-beam)    		 248 / 254 nm
    E-Beam
           
    EpoCore 50 µm
    (1500 rpm, 60 s)
    10 µm - 60 µm
    (1000 - 5000 rpm)    		 Aspect ratio
    5    		 Broadband
    i-Line: 365 nm
    EpoClad 70 µm
    (1500 rpm, 60 s)
    10 µm - 100 µm
    (1000 - 5000 rpm)    		 Aspect ratio
    1    		 Broadband
    i-Line: 365 nm

    other thicknesses on demand

     

    ancilleries

    Resist Series Developer Thinner Remover
    ma-N 400 ma-D 331S ma-T 1046
    ma-T 1044    		 mr-Rem 660
    ma-R 404(S)**
    ma-N 1400 ma-D 533S* ma-T 1046 mr-Rem 660
    ma-R 404(S)**
    ma-N 2400 ma-D 532*/
    ma-D 332    		 ma-T 1047 mr-Rem 660
    ma-R 404(S)**
    EpoCore
    Refractive index @ 830 nm    		 mr-Dev 600*** - O2-plasma
    mr-Rem 660
    EpoClad
    Refractive index @ 830 nm    		 ma-D 532*** - O2-plasma
    mr-Rem 660

    * metal-ion free** strongly alkaline*** solvent based

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