Sommaire
- 1.1.1. datasheet :
- 1.1.2. Properties:
- 1.1.3. Developper:
- 1.1.4. Dilution:
- 1.1.5. Strip:
- 2. Processing Guidelines
- 3. Processing (detailed)
- 3.1.1. 1. Deposit:
- 3.1.1.1.1. spin parameters
- 3.1.2. 2. Post spin bake="Soft Bake" (solvent evaporation)
- 3.1.3. 3. Exposure:
- 3.1.4. 4. Pre-dev bake:
- 3.1.5. 5. Development:
- 3.1.6. 6. Spin dry:
- 3.1.7. 7. Post-dev bake:
- 3.1.8. 8. Cure:
- 3.1.9. 9. Descum:
- 3.1.10. 10. Recycle
- 3.1.10.1.1. before cure:
- 3.1.10.1.2. after cure:
- 3.1.11. 11. Supplementary info
- 3.1.1. 1. Deposit:
-
datasheet :
http://people.rit.edu/deeemc/courses...0Datasheet.pdf
-
Properties:
UV and electro sensitive - positive resist (removed where exposed)
For λ=670nm
n= 1.535
εr= 2.356
λ/2n= 218 nm
-
Developper:
nom dev
-
Dilution:
solvent: solvent
dilution recipe
-
Strip:
chemicals:
- stripper 1 (with link to safety datasheet located on subdirectory of Chemicals)
- stripper 2
- stripper 3
Processing Guidelines
| Dilution and edge bead removal | ex: AZ EBR Solvent |
| Prebake | ex: 110°C, 50", hotplate |
| Exposure | ex: broadband and monochromatic h- and i-line |
| Reversal bake | ex: 120°C, 2 min., hotplate (most critical step) |
| Flood exposure | ex: > 200 mJ/cm² (uncritical) |
| Development | ex: AZ 351B, 1:4 (tank, spray) or AZ 726 (puddle) |
| Postbake | ex: 120°C, 50s hotplate (optional) |
| Removal | ex: AZ 100 Remover, conc. |
Processing (detailed)
1. Deposit:
primer: Primer (special for something? e.g. gold or silicon or...)
spin xx” @ xx rpm (rise time xx”)
spin xx” @ xx rpm (rise time xx”) ⇒ ~xx nm layer
The primer layer must be dried (on hot plate 1’ @ ~100°C) and wafer must be cooled down prior to BCB spin.
resist: Resist name (link to chemicals datasheet)
dispense xx mL for 2 inches wafer
Dispense at constant rate in the center of the wafer, and do not empty the container to avoid bubbles. The resist is viscous so any bubble is trapped, and causes irregularity in the layer.
spin xx rpm xx” (rise time xx”) to spread the resist over the wafer
spin xx” for a uniform coat (rise time xx”)
spin parameters
| Dilution | spin speed | duration (s) | after spin | final | final |
*Depends on development time. Values are given for the procedure explained below for a 2 inches wafer.
2. Post spin bake="Soft Bake" (solvent evaporation)
Hot plate xx’xx - xx’xx
Temperature range: xx-xx°C
warning 1
warning 2
3. Exposure:
xx mJ/cm2/µm
warning 1
4. Pre-dev bake:
Hot plate xx’’ @ xxºC (typical)
Remark 1
warning 1
5. Development:
developper: Developper (link to datasheet on subdirectory of chemicals)
procedure
warning
warning
info
parameters at dd/mm/yyy:
-unexposed wafer, resist spinned at xx rpm (~xx µm), pre-dev bake xx°C, immediate immersion in developer at xx°C (thermometer), fringes disappear after xx’xx".
-exposed wafer, same parameters for all except exposure xx mJ/cm2 (MJB3), development xx’xx". Final thickness xx.xx µm before cure.
Rinse: rinse chemical
procedure
Rinse: ODI (water tap)
procedure
6. Spin dry:
procedure, link to machine etc...
7. Post-dev bake:
Hot plate/oven xx’’ @ xxºC
warning
8. Cure:
procedure
info
9. Descum:
Eliminate residues (~nm)
RIE (gases - proportions)
gas 1: cc
gas 2: cc
P = µbar
| Voltage (V) | Power (W) | Etching Speed (nm/s) | |
| before dev | |||
| after dev | |||
warning
10. Recycle
before cure:
before development: (spoiled spin)
solvent: Solvent (link...)
after development:
- Chemical product (link...) xx’ in warm bath (~xx°C)
- RIE (see table)
after cure:
- RIE (see table)
- Chemical product (link...)
11. Supplementary info
No constraint on ion milling
notice, datasheet (add the file to this page and link here to it ...)
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