photo sensitive - positive resist (removed where exposed)
εr=
λ/2n= nm
MF319
Compatible MIF et MIB
solvent: solvent (add the solvent to Chemicals products list, and link here to safety datasheet)
dilution recipe
chemicals:
- Aceton
- AR 300 - 70
- Remover
RIE:
- CF4 - Ar (typ. 1-2 nm/s)
- ozone plasma (typ. resist residues -few atomic layers- removed in 5 min @ 100W in 'delaqueuse')
Processing
primer: Microposit
spin 5” @ 1000 rpm (rise time 10”)
spin ~30” @ 6000 rpm (rise time 0”)
Not necessary on SiO2 wafers
resist: S1800 series from Shipley
dispense 2mL for 3 inches wafer
Dispense at constant rate in the center of the wafer, and do not empty the container to avoid bubbles.
1- spin 5” @ 1000 rpm (rise time 5”) to spread the resist over the wafer -
or rise time 9” and skip the first step
2- spin 30” for a uniform coat (rise time ~0”)
3- Finish with a 1” @ 7000 rpm (rise time ~0”) to evacuate edges (rather psychological : should do it with back side solvent sputtering)
Spin parameters
Dilution | spin speed | after spin thickness | after bake thickness (nm) |
S1805 | 4000 | 500 | |
S1813 | 4000 | 1300 | |
S1818 | 4000 | 1800 | |
From datasheet:
Hot plate 1’
Temperature: 110°C (set hot-plate to 115°C)
From datasheet ( @ 436 nm = G-line):
Local adjustments:
following doses are given for the MJB3 mask aligner (without UV filter) on silicon substrate
Dose parameters
resist | thickness @ 4000rpm | dose for 85° wall-profile | dose for overhang: +30% |
S1813 | 1300 | 150 | 210 |
S1805 | 500 | 100 | - |
One can switch to the next step if an overhang is not needed (inversed resist profile for good lift-off)
Damp in dichlorobenzene, at 31-33°C (in a regulated bath) for 30’’.
Dichlorobenzene penetrates over 600nm for this duration, and the resist is made less soluble in developer.
To stop the diffusion rinse in cold ODI (under tap), and wash in washing machine for 100’’ at 130 bars.
Do not dry warm in the washing machine
Dry with N2
developer: MF319
First determination of timing: Observe appartition of patterns: first pattern turns white (when hardened in dichlo) in the center of the wafer, then turns dark red (much of the resist is dissolved), and once the last pattern has turned red add 1’.
Development at ambient temperature
Developer must be changed each time (contamination changes parameters) -> use small quantities
parameters 30/01/2006:
-For a 1.3µm thick layer, exposed 200mJ/cm2, hardened for 30’’ @ 32°C in fresh dichlo (resp. used dichlo), development duration at 19°C: after 30’’ (resp. 1’) last pattern turns white, then 50’’ (resp. 1’30) it turns red -> Total time: 1’35 (resp. 2’35). No residues, perfect undercut ~800nm in both cases.
Rinse: De-Ionized water
to stop development, ~20’’ under water tap
Nitrogen
aceton + ultrasounds
solvent
Fichier | Taille | Date | Attaché par | |||
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Data_S1800.pdf Aucune description | 405.67 Ko | 00:55, 13 Fév 2008 | Admin | Actions | ||
S1813.pdf safety datasheet | 29.04 Ko | 10:53, 10 Mar 2015 | Helene_Le_Sueur | Actions |
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