under construction.gif

    Shipley S18 datasheet

     

    • Properties:

    photo sensitive - positive resist (removed where exposed)
    εr=
    λ/2n=  nm

    • Developer:

    MF319
    Compatible MIF et MIB

    • Dilution:

    solvent: solvent (add the solvent to Chemicals products list, and link here to safety datasheet)
    dilution recipe

    • Strip / Lift / Clean:

    chemicals:

    - Aceton
    - AR 300 - 70
    - Remover

    RIE:

    - CF4 - Ar (typ. 1-2 nm/s)
    - ozone plasma (typ. resist residues -few atomic layers- removed in 5 min @ 100W in 'delaqueuse')


    Processing

     

    1.  Deposit:

    primer: Microposit

    spin 5” @ 1000 rpm (rise time 10”)
    spin ~30” @ 6000 rpm (rise time 0”)
    info2.gifNot necessary on SiO2 wafers

    resist: S1800 series from Shipley

    dispense 2mL for 3 inches wafer
    warning.gifDispense at constant rate in the center of the wafer, and do not empty the container to avoid bubbles.

    1- spin 5”  @ 1000 rpm (rise time 5”) to spread the resist over the wafer -
    or rise time 9” and skip the first step
    2- spin 30” for a uniform coat (rise time ~0”)

    3- Finish with a 1” @ 7000 rpm (rise time ~0”) to evacuate edges (rather psychological : should do it with back side solvent sputtering)

     

    Spin parameters

    Dilution

    spin speed
    (rpm)

    after spin thickness
    (nm)

    after bake thickness
    (nm)
    S1805 4000 500  
    S1813 4000 1300  
    S1818 4000 1800  
           

     

    From datasheet:

    2.  Soft Bake (solvent evaporation)

    Hot plate 1’
    Temperature: 110°C (set hot-plate to 115°C)

    warning.gifWafer must be cooled down before exposure

    3.  Exposure:

    From datasheet ( @ 436 nm = G-line):

    Local adjustments:
    following doses are given for the MJB3 mask aligner (without UV filter) on silicon substrate

    Dose parameters

    resist

    thickness @ 4000rpm
    nm

    dose for 85° wall-profile
    mJ/cm2

    dose for overhang: +30%
    mJ/cm2

    S1813 1300  150 210
    S1805 500 100 -

    4.  Hardening:

    One can switch to the next step if an overhang is not needed (inversed resist profile for good lift-off)

    Damp in dichlorobenzene, at 31-33°C (in a regulated bath) for 30’’.
    Dichlorobenzene penetrates over 600nm for this duration, and the resist is made less soluble in developer.

    To stop the diffusion rinse in cold ODI (under tap), and wash in washing machine for 100’’  at 130 bars.
    Do not dry warm in the washing machine
    Dry with N2

     

    warning.gifBe sure not to contaminate developer with Dichlorobenzene 

    5.  Development:

    developer: MF319

    info2.gifFirst determination of timing: Observe appartition of patterns: first pattern turns white (when hardened in dichlo) in the center of the wafer, then turns dark red (much of the resist is dissolved), and once the last pattern has turned red add 1’. 

    Development at ambient temperature
    warning.gifDeveloper must be changed each time (contamination changes parameters) -> use small quantities

    warning.gifMF319 etches Al !!

    parameters 30/01/2006:
    -For a 1.3µm thick layer, exposed 200mJ/cm2, hardened
    for 30’’ @ 32°C in fresh dichlo (resp. used dichlo), development duration at 19°C: after 30’’ (resp. 1’) last pattern turns white, then 50’’ (resp. 1’30) it turns red -> Total time: 1’35 (resp. 2’35). No residues, perfect undercut ~800nm in both cases.

    Rinse: De-Ionized water
    to stop development, ~20’’ under water tap

    6.  Dry:

    Nitrogen

    7.  Recycle

    aceton + ultrasounds

    solvent

    8.  Supplementary info

     

    No constraint on ion milling
    notice, datasheet

    Was this page helpful?
    Mots clés (Modifier les mots clés)
    • No tags

    Fichiers 2

    FichierTailleDateAttaché par 
     Data_S1800.pdf
    Aucune description
    405.67 Ko00:55, 13 Fév 2008AdminActions
     S1813.pdf
    safety datasheet
    29.04 Ko10:53, 10 Mar 2015Helene_Le_SueurActions
    Vous devez être connecté pour poster un commentaire.
    Propulsé par MindTouch Core