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    1. 1. Spin curves

    under construction.gif

    datasheets on: http://microchem.com/pdf/PMMA_Data_Sheet.pdf

    • Properties:

    PMMA positive resists are based on special grades of polymethyl methacrylate designed to provide high contrast, high resolution for e-beam, deep UV (220-250nm) and X-ray lithographic processes. In addition, PMMA is often used as a protective layer in III-V device wafer thinning applications.
    We use here 950,000 molecular weights (MW) in the "safe" solvent anisole.

    photo (deep UV) / electro sensitive - positive resist (leaves where exposed)
    λ/2n= 223 nm (@670nm)

    • Developper:

    MIB-K + IPA (1:3) for very high resolution, low development rate
    MIB-K + IPA (1:2) ...
    MIB-K + IPA (1:1) for high resolution, high development rate
    MIB-K for low resolution, very high development rate

     

    • Dilution:

    solvent: Anisole or A-thinner

    • Strip:

    - Aceton, >30°C, few minutes
    - NMP based removers, 60°C, few 10 minutes
    - AR300-70, 60°C, few minutes


    Spin curves

    PMMA 950K A3 thickness.bmp

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