Page modifiée à 18:43, 26 Fév 2016 par Helene_Le_Sueur
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Al 100 / Ti 20 / Pd 5
On standard Si <100> 300µm / SiO2 500nm
- evap Old Plassys
Al 100nm @ 1nm/s, P_ev = 5e-7 Ti 2*10nm @ 0.5nm/s (error on evap, make a skip step at 10nm, have to relaunch) Pd 5nm @ 0.2nm/s (wait about 10min, because I initially don't have rights to use Pd)
- observation
No apparent default on optical microscope (no tiny black spots)
- etch rate in MIF726
Let it for 15', see no effect
- etch rate in MF319
- Contact resistance without Ion beam (WJOX1_10)
oxidation 24h at ambient
contacts are in between 57Ω and 75Ω
- SEM observation
bare, aged 200°C 2h,
- Tc measurement
- RF measurement
Summary
| sample | oxy (h) | etch time (s) | evap | RA (Ω) | SA 10-3µm2 | nb sq A | RB (Ω) | SB 10-3µm2 | nb sq B | RC (Ω) | SC 10-3µm2 | nb sq C | RD (Ω) | SD 10-3µm2 | nb sq D | average Rcontact (Ω*µm2) | sheet resistance (Ω/□) | comment |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| WJOX1_10 | 24 | 0 | old/old | 90 | 9 | 25 | 56.7 | 9 | 17 | 59.3 | 113 | 20 | 74.2 | 41 | 20 | Al20/Ti10/Pd5 // Al60 | ||
Al 150 / Pd 5
On Si:B <100> 300µm, rho~3-4kohm.cm (lot 2451)
- evap Old Plassys
Al 150nm @ 1nm/s, P_ev = 5e-7 Pd 5nm @ 0.2nm/s
- etch rate in MIF726
Etched in ~15'. Leaves the Pd peel on the wafer.
- etch rate in MF319
Etched in ~13'. Leaves the Pd peel on the wafer.
- Tc measurement
- RF measurement
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Fichiers 2
| Fichier | Taille | Date | Attaché par | |||
|---|---|---|---|---|---|---|
| Al100-Ti20-Pd5_init.JPG Aucune description | 29.69 Ko | 11:04, 12 Fév 2016 | Helene_Le_Sueur | Actions | |
| WJOX1_10_sem.jpg Aucune description | 147.96 Ko | 18:41, 26 Fév 2016 | Helene_Le_Sueur | Actions | |
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