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    INFO

    Name / nom GeCo3
    Absorber / absorbeur

    Ge wafer Umicore - diameter 44 mm - h 175 µm

    Electronic grade - growing axis 100

    SiO coating 70 nm

    Luke grids: 3.8 mm pitch annular

    Thermistor

    NTD 34 B wrapped around

    Araldite glue - without spacers - 30 g pressing force

    Bonding

    NTD: Au wire - 25 µm

    Electrodes: between electrodes - Al wire - 25 µm

    to the thermal bath - Au wire - 25 µm

    Supports/ supports teflon supports
    Holder Cu
    Notes

    no Kapton pads

    polishing of surface: optical and chemical AND

    etching of surface with CP4

    V max on grids = 80 V

       

     

    PHOTO

    Geco3_V_vs_I_curves.jpg

    R_vs_T_GeCo3.jpg

     
    CHARACTERIZATION / CARACTERISATION

    1 - CRYOFREE cryostat - oct-nov 2015

    I bias = 2 nA

      V grids = ? V
    Sensibility [µV/keV] 1 @ 20 mK
    Sigma 55Fe [keV] ?
    Sigma baseline [eV] 7 FWHM pulse tube off

     

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