INFO
Name / nom | GeCo3 |
Absorber / absorbeur | Ge wafer Umicore - diameter 44 mm - h 175 µm Electronic grade - growing axis 100 SiO coating 70 nm Luke grids: 3.8 mm pitch annular |
Thermistor | NTD 34 B wrapped around Araldite glue - without spacers - 30 g pressing force |
Bonding | NTD: Au wire - 25 µm Electrodes: between electrodes - Al wire - 25 µm to the thermal bath - Au wire - 25 µm |
Supports/ supports | teflon supports |
Holder | Cu |
Notes | no Kapton pads polishing of surface: optical and chemical AND etching of surface with CP4 V max on grids = 80 V |
PHOTO
1 - CRYOFREE cryostat - oct-nov 2015
I bias = 2 nA
V grids = ? V | |
Sensibility [µV/keV] | 1 @ 20 mK |
Sigma 55Fe [keV] | ? |
Sigma baseline [eV] | 7 FWHM pulse tube off |
Fichier | Taille | Date | Attaché par | |||
---|---|---|---|---|---|---|
Geco3_V_vs_I_curves.jpg Aucune description | 119.49 Ko | 09:38, 29 Mar 2016 | Valentina_Novati | Actions | ||
R_vs_T_GeCo3.jpg Aucune description | 190.12 Ko | 09:38, 29 Mar 2016 | Valentina_Novati | Actions |