BPC2
BPC2Edit

Sommaire

1. mardi 22/04
2. mercredi 23/04

Trilayer Al-Ti-Au to serve as QP trap, Al capping, and good contacts for subsequent steps.
Wafer Si intrinsic lot 2602 from university wafer, <100>, DSP, 350µm, resistivity >10 kΩ.cm

mardi 22/04

step1, spin BPC2

- bake 110°C, 1'
- spin AZ5214E 4000rpm
- bake 110°C, 1'
- expo 3" @ 9mW/cm2
- bake 120°C (setpoint) 2'30
- flood expo 30"
- dev MIF726 50"

Undercut looks good

mercredi 23/04

step1, evap BPC2

pumped over night, with valve open. P_sas=5.2e-8mb

- Ti pump, 10nm @ 0.2nm/s -> P_sas = 2.4e-8mb
- Al 130nm @ 2nm/s, 10°, planetary 16°/s, P_ev ~ 2.5e-7mb
- Ti 20nm @ 0.5nm/s, 10°, planetary 16°/s, P_ev ~ 2e-8mb
- Au 10nm @ 0.1nm/s, 10°, planetary 16°/s, P_ev ~ 4.6e-8mb

lift aceton, easy
remover PG, 10' @ 60°C, rinse ODI
ozone plasma 1', 100W

step 2, spin BPC2

spin TI prime @ 4000rpm 60"
bake 120°C 1'
spin PMGI SF8 (batch 12060407, exp. 7/1/2013) @ 3000rpm 60"
bake hot plate setpoint 175°C, 5' (measured: 168°C), under beaker
spin PMMA A6 (from Youri bottle) @ 6000rpm 60"
bake hot plate setpoint 175°C, 15', under beaker
spin UV III (bottle VS 10/2013) @ 4000rpm 60"
bake hot plate 140°C, 90"