Date | Nom | orientation | resistivity | oxide layer | ref. fabricant | fournisseur | composition | utilisation |
01/2013 | QPSPJ1 | standard | yes | spec | NbSi 18% 15nm + SiO 5nm | dév process + resonators Q200 & Q2000 | ||
/2013 | QPSPJ2 | 100 | 3-4kΩ.cm | no | 2451 | university wafers | NbSi 18% 15nm | no oxide + reson higher Qs + first QPS oscillator |
11/2013 | QPSLN1 | 100 | 3-4kΩ.cm | no | 2451 | university wafers | NbSi 18% 15nm | reson optical litho + field effect |
03/2014 | QPSPJ3 | 100 | 3-4kΩ.cm | no | 2451 | university wafers | NbSi 23% 5nm + Si 10nm | |
Fichier | Taille | Date | Attaché par | |||
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mask_TiN_CQPS00001.jpg masque raté | 416.56 Ko | 19:00, 16 Jul 2012 | Helene_Le_Sueur | Actions | ||
mask_TiN_CQPS0000100002.Jpg Aucune description | 549.03 Ko | 15:32, 19 Jul 2012 | Helene_Le_Sueur | Actions | ||
mask_TiN_CQPS00002.jpg masque raté | 387.45 Ko | 19:00, 16 Jul 2012 | Helene_Le_Sueur | Actions | ||
mask_TiN_CQPS00003.jpg masque raté | 429.72 Ko | 19:00, 16 Jul 2012 | Helene_Le_Sueur | Actions |
Images 4 | ||
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masque ratémask_TiN_CQPS00001.jpg | masque ratémask_TiN_CQPS00002.jpg | |
masque ratémask_TiN_CQPS00003.jpg |